GLVLSI
2010
IEEE
13 years 9 months ago
2010
IEEE
This paper investigates read-out schemes for a crossbar memory using CNTFET-based elements as cross-points. Two read-out schemes are presented in this paper; the first scheme bias...
SOCC
2008
IEEE
13 years 11 months ago
2008
IEEE
In this paper a new ultra low power SRAM cell is proposed. In the proposed SRAM topology, additional circuitry has been added to a standard 6T-SRAM cell to improve the static nois...