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    ATS
    1998
    IEEE
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    Integrated Current Sensing Device for Micro IDDQ Test
    13 years 9 months ago
    Integrated Current Sensing Device for Micro IDDQ Test
    Download  lowpower.iis.u-tokyo.ac.jp
    A current sensing device, namely Hall Effect MOSFET (HEMOS) is proposed. It is experimentally shown that the HEMOS enables a non-contacting, and non-disturbing current measurement...
    Koichi Nose, Takayasu Sakurai
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