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ICCD
2004
IEEE
154views Hardware» more  ICCD 2004»
14 years 1 months ago
Transistor and Pin Reordering for Gate Oxide Leakage Reduction in Dual T{ox} Circuits
Gate oxide tunneling current (Igate) is emerging as a key roadblock for device scaling in nanometer-scale CMOS circuits. A practical means to reduce Igate is to leverage dual Tox ...
Anup Kumar Sultania, Dennis Sylvester, Sachin S. S...