SBCCI
2005
ACM
13 years 10 months ago
2005
ACM
Gate oxide tunneling current Igate and sub-threshold current Isub dominate the leakage of designs. The latter depends on threshold voltage Vth while Igate vary with the thickness ...
ISQED
2008
IEEE
13 years 11 months ago
2008
IEEE
The effects of random variations during the manufacturing process on devices can be simulated as a variation of transistor parameters. Device degradation, due to temperature or vo...