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ISQED
2009
IEEE

A 0.56-V 128kb 10T SRAM using column line assist (CLA) scheme

10 years 11 months ago
A 0.56-V 128kb 10T SRAM using column line assist (CLA) scheme
We present a small-area 10T SRAM cell without half selection problem. As well, the proposed 10T cell achieves a faster access time and low voltage operation. The cell area is reduced by 25%, and the cell current is increased by 21%, compared with the prior 10T cell. The minimum operating voltage is lowered by the column line assist (CLA) scheme that suppresses write margin degradation. By measurement, we confirmed that the proposed 128-kb SRAM works at 0.56 V. Keywords SRAM, low-voltage operation
Shunsuke Okumura, Yusuke Iguchi, Shusuke Yoshimoto
Added 19 May 2010
Updated 19 May 2010
Type Conference
Year 2009
Where ISQED
Authors Shunsuke Okumura, Yusuke Iguchi, Shusuke Yoshimoto, Hidehiro Fujiwara, Hiroki Noguchi, Koji Nii, Hiroshi Kawaguchi, Masahiko Yoshimoto
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