A 60GHz direct-conversion transmitter in 65nm CMOS technology

This paper presents a 60 GHz direct-conversion transmitter in 65 nm CMOS technology. The power amplifier consists of 4-stage transistors. The circuit model of de-coupling capacitor is built as a transmission line to consider the physical length. In the measurement results, the conversion gain is above 9.6dB at 58-65GHz band, and the 1 dB compression point

• Type: Journal
• Year: 2010
• Where: ASPDAC
• Authors: Naoki Takayama, Kota Matsushita, Shogo Ito, Ning Li, Kenichi Okada, Akira Matsuzawa
• Keywords: ASPDAC 2010, DB Compression Point, GHz Direct-conversion Transmitter, Hardware, Nm Cmos Technology