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DATE
2009
IEEE

On linewidth-based yield analysis for nanometer lithography

8 years 10 months ago
On linewidth-based yield analysis for nanometer lithography
— Lithographic variability and its impact on printability is a major concern in today’s semiconductor manufacturing process. To address sub-wavelength printability, a number of resolution enhancement techniques (RET) have been used. While RET techniques allow printing of sub-wavelength features, the feature width itself becomes highly sensitive to process parameters, which in turn detracts from yield due to small perturbations in manufacturing parameters. Yield loss is a function of random variables such as depth-of-focus and exposure dose. In this paper, we present a first order canonical dose/focus model that takes into account both the correlated and independent randomness of the effects of lithographic variation. A novel tile-based yield estimation technique for a given layout, based on a statistical model for process variability is presented. Another novel contribution of this paper is the computation of global and local line-yield probabilities. The key issues addressed in th...
Aswin Sreedhar, Sandip Kundu
Added 20 May 2010
Updated 20 May 2010
Type Conference
Year 2009
Where DATE
Authors Aswin Sreedhar, Sandip Kundu
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