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ISCAS
1999
IEEE

Optimization of CMOS MEMS microwave power sensors

9 years 4 months ago
Optimization of CMOS MEMS microwave power sensors
- Micromachined power sensors with operation up to 50 GHz were recently achieved in CMOS technology [1]. To improve their sensitivity and signal-to-noise ratio, while maintaining microwave performance, several design parameters must be considered, such as the number and placement of thermocouples. This paper presents experimental and analytical thermal characterization of the sensors, which provides insight into the proper adjustment of the layout parameters. Experimental results were obtained by indirect measurements of the sensor temperature distribution under various applied power conditions. A simple and approximate model was developed, and adjusted based on experimental results, which was then used to show the effects of the variations in layout parameters on the overall device sensitivity. The model includes thermoelectric Peltier and Thomson effects.
V. Milanovic, M. Hopcroft, C. A. Zincke, M. Gaitan
Added 03 Aug 2010
Updated 03 Aug 2010
Type Conference
Year 1999
Where ISCAS
Authors V. Milanovic, M. Hopcroft, C. A. Zincke, M. Gaitan, Mona E. Zaghloul
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