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DATE
2010
IEEE

From transistors to MEMS: Throughput-aware power gating in CMOS circuits

10 years 2 months ago
From transistors to MEMS: Throughput-aware power gating in CMOS circuits
—In this paper we study the effectiveness of two power gating methods – transistor switches and MEMS switches – in reducing the power consumption of a design with a certain target throughput. Transistor switches are simple, but have fundamental limitations in their effectiveness. MEMS switches, with zero leakage in the off state, have achieved much focus over the past decade in the RF field, but have only very recently been explored in the context of power gating. In this paper we study both methods in conjunction with voltage scaling and show that MEMS switches are the superior choice over a wide range of target throughputs, especially low-throughput applications such as wireless sensor networks and biomedical implants. We also show that the architectural choices and operating conditions in a throughput-aware design can be profoundly different when using MEMS switches as opposed to transistor switches. For instance, while transistor switches favor smaller and slower architectur...
Michael B. Henry, Leyla Nazhandali
Added 10 Jul 2010
Updated 10 Jul 2010
Type Conference
Year 2010
Where DATE
Authors Michael B. Henry, Leyla Nazhandali
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