—In this paper we study the effectiveness of two power gating methods – transistor switches and MEMS switches – in reducing the power consumption of a design with a certain t...
Ambipolar devices have been reported in many technologies, including carbon nanotube field effect transistors (CNTFETs). The ambipolarity can be in-field controlled with a secon...
M. Haykel Ben Jamaa, Kartik Mohanram, Giovanni De ...
In nanometer scaled CMOS devices significant increase in the subthreshold, the gate and the reverse biased junction band-toband-tunneling (BTBT) leakage, results in the large incr...
A new circuit technique based on a single PMOS sleep transistor and a dual threshold voltage CMOS technology is proposed in this paper for simultaneously reducing subthreshold and...
: Double-Gate (DG) transistors have emerged as promising devices for nano-scale circuits due to their better scalability compared to bulk CMOS. Among the various types of DG device...