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DATE
2010
IEEE
166views Hardware» more  DATE 2010»
13 years 8 months ago
From transistors to MEMS: Throughput-aware power gating in CMOS circuits
—In this paper we study the effectiveness of two power gating methods – transistor switches and MEMS switches – in reducing the power consumption of a design with a certain t...
Michael B. Henry, Leyla Nazhandali
DATE
2010
IEEE
171views Hardware» more  DATE 2010»
13 years 8 months ago
Power consumption of logic circuits in ambipolar carbon nanotube technology
Ambipolar devices have been reported in many technologies, including carbon nanotube field effect transistors (CNTFETs). The ambipolarity can be in-field controlled with a secon...
M. Haykel Ben Jamaa, Kartik Mohanram, Giovanni De ...
DATE
2005
IEEE
158views Hardware» more  DATE 2005»
13 years 9 months ago
Modeling and Analysis of Loading Effect in Leakage of Nano-Scaled Bulk-CMOS Logic Circuits
In nanometer scaled CMOS devices significant increase in the subthreshold, the gate and the reverse biased junction band-toband-tunneling (BTBT) leakage, results in the large incr...
Saibal Mukhopadhyay, Swarup Bhunia, Kaushik Roy
GLVLSI
2006
IEEE
145views VLSI» more  GLVLSI 2006»
13 years 9 months ago
Leakage current starved domino logic
A new circuit technique based on a single PMOS sleep transistor and a dual threshold voltage CMOS technology is proposed in this paper for simultaneously reducing subthreshold and...
Zhiyu Liu, Volkan Kursun
ICCAD
2005
IEEE
114views Hardware» more  ICCAD 2005»
14 years 16 days ago
Double-gate SOI devices for low-power and high-performance applications
: Double-Gate (DG) transistors have emerged as promising devices for nano-scale circuits due to their better scalability compared to bulk CMOS. Among the various types of DG device...
Kaushik Roy, Hamid Mahmoodi-Meimand, Saibal Mukhop...