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DAC
2007
ACM

Width-dependent Statistical Leakage Modeling for Random Dopant Induced Threshold Voltage Shift

10 years 3 days ago
Width-dependent Statistical Leakage Modeling for Random Dopant Induced Threshold Voltage Shift
Statistical behavior of device leakage and threshold voltage shows a strong width dependency under microscopic random dopant fluctuation. Leakage estimation using the conventional square-root method shows a discrepancy as large as 45% compared to the real case because it fails to model the effective VT shift in the subthreshold region. This paper presents a width-dependent statistical leakage model with an estimation error less than 5%. Design examples on SRAMs and domino circuits demonstrate the significance of the proposed model. Categories and Subject Descriptors B.8.2 [Hardware]: Performance and Reliability Performance Analysis and Design Aids General Terms Design, Performance Keywords Leakage, process variation, random dopant fluctuation
Jie Gu, Sachin S. Sapatnekar, Chris H. Kim
Added 12 Nov 2009
Updated 12 Nov 2009
Type Conference
Year 2007
Where DAC
Authors Jie Gu, Sachin S. Sapatnekar, Chris H. Kim
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