44 search results - page 1 / 9 » Adaptive SRAM memory for low power and high yield |
ICCD
2008
IEEE
13 years 11 months ago
2008
IEEE
— SRAMs typically represent half of the area and more than half of the transistors on a chip today. Variability increases as feature size decreases, and the impact of variability...
ISCAS
2007
IEEE
13 years 11 months ago
2007
IEEE
- Data in conventional six transistor (6T) static random access memory (SRAM) cells are vulnerable to noise due to the direct access to the data storage nodes through the bit lines...
VLSID
2009
IEEE
14 years 5 months ago
2009
IEEE
Abstract-- Single-ended static random access memory (SESRAM) is well known for their tremendous potential of low active power and leakage dissipations. In this paper, we present a ...
ISCAS
2007
IEEE
13 years 11 months ago
2007
IEEE
— Reducing the leakage power in embedded SRAM memories is critical for low-power applications. Raising the source voltage of SRAM cells in standby mode reduces the leakage curren...
VLSID
2002
IEEE
14 years 5 months ago
2002
IEEE
Critical issues in designing a high speed, low power static RAM in deep submicron technologies are described along with the design techniques used to overcome them. With appropria...