63 search results - page 4 / 13 » CMOS gate modeling based on equivalent inverter |
ICCAD
1994
IEEE
13 years 9 months ago
1994
IEEE
In this paper we present a power dissipation model considering the charging/discharging of capacitance at the gate output node as well as internal nodes, and capacitance feedthrou...
GLVLSI
2008
IEEE
13 years 11 months ago
2008
IEEE
Novel nano-scale devices have shown promising potential to overcome physical barriers faced by complementary metaloxide semiconductor (CMOS) technology in future circuit design. H...
DELTA
2010
IEEE
13 years 10 months ago
2010
IEEE
—In this paper we present a new model for characterization of probabilistic gates. While still not mainstream, probabilistic CMOS has the potential to dramatically reduce energy ...
SBCCI
2004
ACM
13 years 10 months ago
2004
ACM
This paper presents a design methodology for RF CMOS Low Noise Amplifiers (LNA). This methodology uses a current–based MOSFET model, which allows a detailed analysis of an LNA f...
VLSID
2004
IEEE
14 years 5 months ago
2004
IEEE
Abstract--In this paper, we present a new approach to calculate the steady state resistance values for CMOS library gates. These resistances are defined as simple equivalent models...