- This paper provides an overview of design/test/CAD silicon cost-related issues. All major factors contributing to the rapid growth of manufacturing costs are explained and a simp...
As a result of aggressive technology scaling, gate leakage (gate oxide direct tunneling) has become a major component of total power dissipation. Use of dielectrics of higher perm...
Saraju P. Mohanty, Ramakrishna Velagapudi, Elias K...
With the advent of nanometer technologies, the design size of integrated circuits is getting larger and the operation speed is getting faster. As a consequence, test cost is becom...
Concerned by the wall that Moore’s Law is expected to hit in the next decade, the integrated circuit community is turning to emerging nanotechnologies for continued device impro...
— Three-dimensional die stacking integration provides the ability to stack multiple layers of processed silicon with a large number of vertical interconnects. Through Silicon Via...
Igor Loi, Subhasish Mitra, Thomas H. Lee, Shinobu ...