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» Design and CAD challenges in 45nm CMOS and beyond
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DAC
2011
ACM
12 years 5 months ago
Rethinking memory redundancy: optimal bit cell repair for maximum-information storage
SRAM design has been a major challenge for nanoscale manufacturing technology. We propose a new bit cell repair scheme for designing maximum-information memory system (MIMS). Unli...
Xin Li
ASPLOS
2010
ACM
14 years 3 days ago
Dynamically replicated memory: building reliable systems from nanoscale resistive memories
DRAM is facing severe scalability challenges in sub-45nm technology nodes due to precise charge placement and sensing hurdles in deep-submicron geometries. Resistive memories, suc...
Engin Ipek, Jeremy Condit, Edmund B. Nightingale, ...
GI
2009
Springer
13 years 10 months ago
Challenges of Electronic CAD in the Nano Scale Era
: Future nano scale devices will expose different characteristics than todays silicon devices. While the exponential growth of non recurring expenses (NRE, mostly due to mask sets)...
Christian Hochberger, Andreas Koch
DAC
2008
ACM
13 years 7 months ago
Technology exploration for graphene nanoribbon FETs
Graphene nanoribbon FETs (GNRFETs) are promising devices for beyond-CMOS nanoelectronics because of their excellent carrier transport properties and potential for large scale proc...
Mihir R. Choudhury, Youngki Yoon, Jing Guo, Kartik...
DAC
1999
ACM
14 years 6 months ago
Converting a 64b PowerPC Processor from CMOS Bulk to SOI Technology
A 550MHz 64b PowerPC processor was developed for fabrication in Silicon-On-Insulator (SOI) technology from a processor previously designed and fabricated in bulk CMOS [1]. Both th...
D. Allen, D. Behrends, B. Stanisic