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» Design of RF CMOS low noise amplifiers using a current based...
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SBCCI
2004
ACM
100views VLSI» more  SBCCI 2004»
13 years 11 months ago
Design of RF CMOS low noise amplifiers using a current based MOSFET model
This paper presents a design methodology for RF CMOS Low Noise Amplifiers (LNA). This methodology uses a current–based MOSFET model, which allows a detailed analysis of an LNA f...
Virgínia Helena Varotto Baroncini, Oscar da...
ISLPED
2009
ACM
168views Hardware» more  ISLPED 2009»
14 years 9 days ago
Low power circuit design based on heterojunction tunneling transistors (HETTs)
The theoretical lower limit of subthreshold swing in MOSFETs (60 mV/decade) significantly restricts low voltage operation since it results in a low ON to OFF current ratio at low ...
Daeyeon Kim, Yoonmyung Lee, Jin Cai, Isaac Lauer, ...