In this paper, new SRAM cell design methods for FinFET technology are proposed. One of the most important features of FinFET is that the independent front and back gate can be bia...
In this work we propose a methodology to self-consistently solve leakage power with temperature to predict thermal runaway. We target 28nm FinFET based circuits as they are more p...
We present a low-power SRAM design based on the theory of energy recovery that reduces the dissipation associated with write operations while operating at high speed. The energy-r...
NBTI has been a major aging mechanism for advanced CMOS technology and PBTI is also looming as a big concern. This work first proposes a compact on-chip sensor design that tracks ...
Zhenyu Qi, Jiajing Wang, Adam C. Cabe, Stuart N. W...
A novel design approach for simultaneous power and stability (static noise margin, SNM) optimization of nanoCMOS static random access memory (SRAM) is presented. A 45nm single-end...
Garima Thakral, Saraju P. Mohanty, Dhruva Ghai, Dh...