202 search results - page 1 / 41 » Framework for Fault Analysis and Test Generation in DRAMs |
DATE
2005
IEEE
13 years 11 months ago
2005
IEEE
Abstract: With the increasing complexity of memory behavior, attempts are being made to come up with a methodical approach that employs electrical simulation to tackle the memory t...
DATE
2006
IEEE
13 years 11 months ago
2006
IEEE
Abstract: DRAMs play an important role in the semiconductor industry, due to their highly dense layout and their low price per bit. This paper presents the first framework of faul...
MTDT
2003
IEEE
13 years 10 months ago
2003
IEEE
Abstract: The high complexity of the faulty behavior observed in DRAMs is caused primarily by the presence of internal floating nodes in defective DRAMs. This paper describes a ne...
ATS
2003
IEEE
13 years 10 months ago
2003
IEEE
Abstract: As a result of variations in the fabrication process, different memory components are produced with different operational characteristics, a situation that complicates th...
DATE
2002
IEEE
13 years 10 months ago
2002
IEEE
: It has always been assumed that fault models in memories are sufficiently precise for specifying the faulty behavior. This means that, given a fault model, it should be possible...