Abstract— We study leakage-power reduction in standby random access memories (SRAMs) during data-retention. An SRAM cell requires a minimum critical supply voltage (DRV) above wh...
Animesh Kumar, Huifang Qin, Prakash Ishwar, Jan M....
SRAM leakage power dominates the total power of low duty-cycle applications, e.g., sensor nodes. Accordingly, leakage power reduction during data-retention in SRAM standby is ofte...
Animesh Kumar, Huifang Qin, Prakash Ishwar, Jan M....