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» Impact of Gate-Length Biasing on Threshold-Voltage Selection
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ISQED
2006
IEEE
107views Hardware» more  ISQED 2006»
13 years 10 months ago
Impact of Gate-Length Biasing on Threshold-Voltage Selection
Gate-length biasing is a runtime leakage reduction technique that leverages on the short-channel effect by marginally increasing the gate-length of MOS devices to significantly ...
Andrew B. Kahng, Swamy Muddu, Puneet Sharma
ICCAD
2006
IEEE
127views Hardware» more  ICCAD 2006»
14 years 1 months ago
Joint design-time and post-silicon minimization of parametric yield loss using adjustable robust optimization
Parametric yield loss due to variability can be effectively reduced by both design-time optimization strategies and by adjusting circuit parameters to the realizations of variable...
Murari Mani, Ashish Kumar Singh, Michael Orshansky