With 90nm CMOS in production and 65nm testing in progress, power has been pushed to the forefront of design metrics. This paper will outline practical techniques that are used to ...
As a result of aggressive technology scaling, gate leakage (gate oxide direct tunneling) has become a major component of total power dissipation. Use of dielectrics of higher perm...
Saraju P. Mohanty, Ramakrishna Velagapudi, Elias K...