19 search results - page 2 / 4 » MOSFET modeling for RF-CMOS design |
ISLPED
2009
ACM
13 years 12 months ago
2009
ACM
In this paper, we observe that minimum energy Emin of subthreshold logic dramatically increases when reaching 45 nm node. We demonstrate by circuit simulation and analytical model...
ASPDAC
2007
ACM
13 years 9 months ago
2007
ACM
- Two challenges for the accurate prediction of GHz CMOS analog/RF building blocks are presented. Challenging the usage of new compact MOSFET models enhances the simulation accurac...
DAC
2006
ACM
14 years 6 months ago
2006
ACM
FinFET devices promise to replace traditional MOSFETs because of superior ability in controlling leakage and minimizing short channel effects while delivering a strong drive curre...
DATE
2008
IEEE
13 years 7 months ago
2008
IEEE
Advanced MOSFETs such as Strained Silicon (SS) devices have emerged as critical enablers to keep Moore's law on track for sub100nm technologies. Use of Strained Silicon devic...
ICCAD
2005
IEEE
13 years 11 months ago
2005
IEEE
Physics-based compact modeling, as opposed to the conventional empirical approach, is emphasized for nanoscale nonclassical CMOS. UFDG, a physics-based compact model for generic d...