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» Measurements and modeling of intrinsic fluctuations in MOSFE...
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ISLPED
2005
ACM
98views Hardware» more  ISLPED 2005»
13 years 10 months ago
Measurements and modeling of intrinsic fluctuations in MOSFET threshold voltage
Ali Keshavarzi, Gerhard Schrom, Stephen Tang, Sean...
EURODAC
1995
IEEE
182views VHDL» more  EURODAC 1995»
13 years 8 months ago
Delay modelling improvement for low voltage applications
Based on an explicit formulation of delays, an improved model for low voltage operation of CMOS inverter has been derived. Extrinsic and intrinsic effects, such as transistor curr...
Jean Michel Daga, Michel Robert, Daniel Auvergne
ITC
2003
IEEE
123views Hardware» more  ITC 2003»
13 years 10 months ago
Hysteresis of Intrinsic IDDQ Currents
: Empirical analyses of the IDDQ signatures of 0.18 µm devices indicate that IDDQ currents exhibit hysteresis. A newly proposed test method, SPIRIT (Single Pattern Iteration IDDQ ...
Yukio Okuda, Nobuyuki Furukawa