14 search results - page 2 / 3 » Modeling and Reduction of Gate Leakage during Behavioral Syn... |
ISQED
2006
IEEE
13 years 10 months ago
2006
IEEE
As a result of aggressive technology scaling, gate leakage (gate oxide direct tunneling) has become a major component of total power dissipation. Use of dielectrics of higher perm...
DATE
2006
IEEE
13 years 10 months ago
2006
IEEE
For CMOS technologies below 65nm, gate oxide direct tunneling current is a major component of the total power dissipation. This paper presents a simulated annealing based algorith...
ISVLSI
2005
IEEE
13 years 10 months ago
2005
IEEE
— Direct tunneling current is the major component of static power dissipation of a CMOS circuit for technology below 65nm, where the gate dielectric (SiO2) is very low. We intuit...
ASPDAC
2004
ACM
13 years 10 months ago
2004
ACM
— Reducing the ever-growing leakage power is critical to power efficient designs. Leakage reduction techniques such as power-gating using sleep transistor insertion introduces la...
DAC
2002
ACM
14 years 5 months ago
2002
ACM
Reducing power dissipation is one of the most principle subjects in VLSI design today. Scaling causes subthreshold leakage currents to become a large component of total power diss...