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DATE
2006
IEEE
158views Hardware» more  DATE 2006»
13 years 10 months ago
Modeling multiple input switching of CMOS gates in DSM technology using HDMR
Abstract— Continuing scaling of CMOS technology has allowed aggressive pursuant of increased clock rate in DSM chips. The ever shorter clock period has made switching times of di...
Jayashree Sridharan, Tom Chen
DAC
1996
ACM
13 years 9 months ago
Modeling the Effects of Temporal Proximity of Input Transitions on Gate Propagation Delay and Transition Time
: While delay modeling of gates with a single switching input has received considerable attention, the case of multiple inputs switching in close temporal proximity is just beginni...
V. Chandramouli, Karem A. Sakallah
VLSID
2006
IEEE
129views VLSI» more  VLSID 2006»
14 years 5 months ago
Modeling and Reduction of Gate Leakage during Behavioral Synthesis of NanoCMOS Circuits
For a nanoCMOS of sub-65nm technology, where the gate oxide (SiO2) thickness is very low, the gate leakage is one of the major components of power dissipation. In this paper, we pr...
Saraju P. Mohanty, Elias Kougianos
ASPDAC
2006
ACM
157views Hardware» more  ASPDAC 2006»
13 years 10 months ago
Delay modeling and static timing analysis for MTCMOS circuits
- One of the critical issues in MTCMOS design is how to estimate a circuit delay quickly. In this paper, we propose a delay modeling and static timing analysis (STA) methodology ta...
Naoaki Ohkubo, Kimiyoshi Usami
DATE
2008
IEEE
125views Hardware» more  DATE 2008»
13 years 11 months ago
Current source based standard cell model for accurate signal integrity and timing analysis
— The inductance and coupling effects in interconnects and non-linear receiver loads has resulted in complex input signals and output loads for gates in the modern deep submicron...
Amit Goel, Sarma B. K. Vrudhula