Abstract— Continuing scaling of CMOS technology has allowed aggressive pursuant of increased clock rate in DSM chips. The ever shorter clock period has made switching times of di...
: While delay modeling of gates with a single switching input has received considerable attention, the case of multiple inputs switching in close temporal proximity is just beginni...
For a nanoCMOS of sub-65nm technology, where the gate oxide (SiO2) thickness is very low, the gate leakage is one of the major components of power dissipation. In this paper, we pr...
- One of the critical issues in MTCMOS design is how to estimate a circuit delay quickly. In this paper, we propose a delay modeling and static timing analysis (STA) methodology ta...
— The inductance and coupling effects in interconnects and non-linear receiver loads has resulted in complex input signals and output loads for gates in the modern deep submicron...