In deep sub-micron ICs, growing amounts of ondie memory and scaling effects make embedded memories increasingly vulnerable to reliability and yield problems. As scaling progresses...
Jangwoo Kim, Nikos Hardavellas, Ken Mai, Babak Fal...
Technology advancements have enabled the integration of large on-die embedded DRAM (eDRAM) caches. eDRAM is significantly denser than traditional SRAMs, but must be periodically r...
Chris Wilkerson, Alaa R. Alameldeen, Zeshan Chisht...
We present ECC FIFO, a mechanism enabling two-tiered last-level cache error protection using an arbitrarily strong tier-2 code without increasing on-chip storage. Instead of addin...
Conventional error correcting code (ECC) schemes used in memories and caches cannot correct double bit errors caused by a single event upset (SEU). As memory density increases, mu...
With advances in process technology, soft errors (SE) are becoming an increasingly critical design concern. Due to their large area and high density, caches are worst hit by soft ...