19 search results - page 2 / 4 » Nanometer Device Scaling in Subthreshold Circuits |
DATE
2005
IEEE
13 years 11 months ago
2005
IEEE
Nanometer circuits are becoming increasingly susceptible to soft-errors due to alpha-particle and atmospheric neutron strikes as device scaling reduces node capacitances and suppl...
DAC
2004
ACM
14 years 6 months ago
2004
ACM
Electrothermal couplings between supply voltage, operating frequency, power dissipation and die temperature have been shown to significantly impact the energy-delay-product (EDP) ...
ISLPED
2006
ACM
13 years 11 months ago
2006
ACM
As transistors continue to scale down into the nanometer regime, device leakage currents are becoming the dominant cause of power dissipation in nanometer caches, making it essent...
ISCAS
2002
IEEE
13 years 10 months ago
2002
IEEE
We present a CMOS circuit that utilizes the back-gate effect to extend the linear range of a subthreshold MOS transconductor. Previous designs of wide-linear-range transconductors...
DSD
2007
IEEE
13 years 9 months ago
2007
IEEE
In this study, we investigate different cache fault tolerance techniques to determine which will be most effective when on-chip memory cell defect probabilities exceed those of cu...