35 search results - page 3 / 7 » New subthreshold concepts in 65nm CMOS technology |
TVLSI
2008
13 years 5 months ago
2008
Data stability of SRAM cells has become an important issue with the scaling of CMOS technology. Memory banks are also important sources of leakage since the majority of transistors...
VLSID
2009
IEEE
14 years 5 months ago
2009
IEEE
We propose a novel dependable SRAM with 7T cells and their array structure that avoids a half-selection problem. In addition, we introduce a new concept, "quality of a bit (Q...
ISCAS
2007
IEEE
13 years 11 months ago
2007
IEEE
- Data in conventional six transistor (6T) static random access memory (SRAM) cells are vulnerable to noise due to the direct access to the data storage nodes through the bit lines...
DATE
2008
IEEE
13 years 11 months ago
2008
IEEE
Sleep transistor insertion is one of today’s most promising and widely adopted solutions for controlling stand-by leakage power in nanometer circuits. Although single-cycle powe...
ISQED
2008
IEEE
13 years 11 months ago
2008
IEEE
Large-scale process fluctuations (particularly random device mismatches) at nanoscale technologies bring about highdimensional strongly nonlinear performance variations that canno...