4 search results - page 1 / 1 » Rewriting codes for joint information storage in flash memor... |
TIT
2010
12 years 11 months ago
2010
Abstract--Memories whose storage cells transit irreversibly between states have been common since the start of the data storage technology. In recent years, flash memories have bec...
CORR
2010
Springer
13 years 2 months ago
2010
Springer
Abstract--Flash memory is well-known for its inherent asymmetry: the flash-cell charge levels are easy to increase but are hard to decrease. In a general rewriting model, the store...
TIT
2010
12 years 11 months ago
2010
NAND flash memories are currently the most widely used type of flash memories. In a NAND flash memory, although a cell block consists of many pages, to rewrite one page, the whole ...
CODES
2008
IEEE
13 years 6 months ago
2008
IEEE
Memory subsystems have been considered as one of the most critical components in embedded systems and furthermore, displaying increasing complexity as application requirements div...