8 search results - page 2 / 2 » SRAM Read Write Margin Enhancements Using FinFETs |
SOCC
2008
IEEE
14 years 4 days ago
2008
IEEE
In this paper a new ultra low power SRAM cell is proposed. In the proposed SRAM topology, additional circuitry has been added to a standard 6T-SRAM cell to improve the static nois...
ICASSP
2009
IEEE
13 years 3 months ago
2009
IEEE
We have developed a VLSI chip for 5,000 word speakerindependent continuous speech recognition. This chip employs a context-dependent HMM (hidden Markov model) based speech recogni...
ECTEL
2009
Springer
14 years 10 days ago
2009
Springer
While reading documents, people commonly make annotations: they underline or highlight text and write comments in the margin. Making annotations during reading activities has been ...