9 search results - page 1 / 2 » Simulating and Improving Microelectronic Device Reliability ... |
ISQED
2005
IEEE
13 years 10 months ago
2005
IEEE
The purpose of this work is to explore how device operation parameters such as switching speed and power dissipation scale with voltage and temperature. We simulated a CMOS ring o...
ISQED
2006
IEEE
13 years 10 months ago
2006
IEEE
— Negative Bias Temperature Instability (NBTI) has the potential to become one of the main show-stoppers of circuit reliability in nanometer scale devices due to its deleterious ...
ICCAD
2006
IEEE
14 years 1 months ago
2006
IEEE
— Negative Bias Temperature Instability (NBTI) in PMOS transistors has become a significant reliability concern in present day digital circuit design. With continued scaling, th...
ICCAD
2010
IEEE
13 years 2 months ago
2010
IEEE
3D stacked circuits reduce communication delay in multicore system-on-chips (SoCs) and enable heterogeneous integration of cores, memories, sensors, and RF devices. However, vertic...
VLSID
2007
IEEE
14 years 5 months ago
2007
IEEE
Device scaling such as reduced oxide thickness and high electric field has given rise to various reliability concerns. One such growing issue of concern is the degradation of PMOS...