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» Testing Flash Memories for Tunnel Oxide Defects
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VLSID
2008
IEEE
122views VLSI» more  VLSID 2008»
13 years 11 months ago
Testing Flash Memories for Tunnel Oxide Defects
— Testing non volatile memories for tunnel oxide defects is one of the most important aspects to guarantee cell reliability. Defective tunnel oxide layer in core memory cells can...
Mohammad Gh. Mohammad, Kewal K. Saluja
DAC
2009
ACM
14 years 5 months ago
Improving STT MRAM storage density through smaller-than-worst-case transistor sizing
This paper presents a technique to improve the storage density of spin-torque transfer (STT) magnetoresistive random access memory (MRAM) in the presence of significant magnetic t...
Wei Xu, Yiran Chen, Xiaobin Wang, Tong Zhang