2 search results - page 1 / 1 » Variability-Aware Bulk-MOS Device Design |
TCAD
2008
13 years 4 months ago
2008
As CMOS technology is scaled down toward the nanoscale regime, drastically growing leakage currents and variations in device characteristics are becoming two important design chall...
TCAD
2008
13 years 4 months ago
2008
Abstract--The fabrication of crossbar memories with sublithographic features is expected to be feasible within several emerging technologies; in all of them, the nanowire (NW) deco...