ISQED
2006
IEEE
13 years 10 months ago
2006
IEEE
As a result of aggressive technology scaling, gate leakage (gate oxide direct tunneling) has become a major component of total power dissipation. Use of dielectrics of higher perm...
DATE
2006
IEEE
13 years 10 months ago
2006
IEEE
For CMOS technologies below 65nm, gate oxide direct tunneling current is a major component of the total power dissipation. This paper presents a simulated annealing based algorith...
ICCD
2004
IEEE
14 years 1 months ago
2004
IEEE
A negative effect of ever-shrinking supply and threshold voltages is the larger percentage of total power consumption that comes from leakage current. Several techniques have been...