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12 years 11 months ago
Improving Multi-Level NAND Flash Memory Storage Reliability Using Concatenated BCH-TCM Coding
By storing more than one bit in each memory cell, multi-level per cell (MLC) NAND flash memories are dominating global flash memory market due to their appealing storage density ad...
Shu Li, Tong Zhang
DATE
2009
IEEE
180views Hardware» more  DATE 2009»
13 years 11 months ago
FSAF: File system aware flash translation layer for NAND Flash Memories
NAND Flash Memories require Garbage Collection (GC) and Wear Leveling (WL) operations to be carried out by Flash Translation Layers (FTLs) that oversee flash management. Owing to ...
Sai Krishna Mylavarapu, Siddharth Choudhuri, Avira...