TVLSI
2008
13 years 4 months ago
2008
-- Aggressive CMOS scaling results in low threshold voltage and thin oxide thickness for transistors manufactured in deep submicron regime. As a result, reducing the subthreshold a...
ISCAS
2006
IEEE
13 years 11 months ago
2006
IEEE
In this paper we present two polynomial time-complexity heuristic algorithms for optimization of gate-oxide leakage (tunneling current) during behavioral synthesis through simulta...