VLSID
2007
IEEE
14 years 5 months ago
2007
IEEE
Device scaling such as reduced oxide thickness and high electric field has given rise to various reliability concerns. One such growing issue of concern is the degradation of PMOS...
VLSID
2008
IEEE
14 years 5 months ago
2008
IEEE
Negative Bias Temperature Instability (NBTI) has been identified as a major and critical reliability issue for PMOS devices in nano-scale designs. It manifests as a negative thres...