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2003
IEEE

A Built-In Self-Repair Scheme for Semiconductor Memories with 2-D Redundancy

10 years 3 months ago
A Built-In Self-Repair Scheme for Semiconductor Memories with 2-D Redundancy
Embedded memories are among the most widely used cores in current system-on-chip (SOC) implementations. Memory cores usually occupy a significant portion of the chip area, and dominate the manufacturing yield of the chip. Efficient yield-enhancement techniques for embedded memories thus are important for SOC. In this paper we present a built-in self-repair (BISR) scheme for semiconductor memories with 2-D redundancy structures. The BISR design is composed of a built-in self-test (BIST) module and a built-in redundancy analysis (BIRA) module. Our BIST circuit supports three test modes: the 1) main memory testing, 2) spare memory testing, and 3) repair modes. The BIRA module executes the proposed redundancy analysis (RA) algorithm for RAM with a 2-D redundancy structure, i.e., spare rows and spare columns. The BIRA module also serves as the reconfiguration (address remapping) unit in the normal mode. Experimental results show that a high repair rate (i.e., the ratio of the number of ...
Jin-Fu Li, Jen-Chieh Yeh, Rei-Fu Huang, Cheng-Wen
Added 04 Jul 2010
Updated 04 Jul 2010
Type Conference
Year 2003
Where ITC
Authors Jin-Fu Li, Jen-Chieh Yeh, Rei-Fu Huang, Cheng-Wen Wu, Peir-Yuan Tsai, Archer Hsu, Eugene Chow
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