Leakage current analysis for intra-chip wireless interconnects

A simulation-based feasibility study of an intra-chip wireless interconnect system is presented. The wireless interconnect system is modelled in a 250 nm standard complementary metal-oxide semiconductor (CMOS) technology operating at typical conditions. A finite element method (FEM) based 3-D fullwave solver is used to perform the electromagnetic field analysis. In the field analysis, the effects of the radiation of an intra-chip wireless interconnect system operating at 16 GHz on the circuit devices and local metal interconnects at arbitrary distances from the antennas are investigated. It is shown that the transmission gain between the antennas is mostly unaffected by the presence of local metal interconnects. The transmission scattering parameter (s-parameter) between the radiating antenna and the metal

• Type: Conference
• Year: 2010
• Where: ISQED
• Authors: Ankit More, Baris Taskin
• Keywords: Hardware, Intra-chip Wireless Interconnect, ISQED 2010, Local Metal Interconnects, Wireless Interconnect