3 search results - page 1 / 1 » 65NM sub-threshold 11T-SRAM for ultra low voltage applicatio... |
SOCC
2008
IEEE
13 years 11 months ago
2008
IEEE
In this paper a new ultra low power SRAM cell is proposed. In the proposed SRAM topology, additional circuitry has been added to a standard 6T-SRAM cell to improve the static nois...
ISQED
2009
IEEE
13 years 11 months ago
2009
IEEE
In this paper challenges observed in 65nm technology for circuits utilizing subthreshold region operation are presented. Different circuits are analyzed and simulated for ultra lo...
ISQED
2010
IEEE
13 years 6 months ago
2010
IEEE
A new SRAM design is proposed. Body biasing improves the static noise margin (SNM) improved by at least 15% compared to the standard cells. Through using this technique, lowering ...