As the IC process technology scales, the oxide thickness and operating voltage continues to decrease. The gate oxide thickness in recent and future IC process technology has appro...
This paper presents the design and evaluation of a new SRAM cell made of nine transistors (9T). The proposed 9T cell utilizes a scheme with separate read and write wordlines; it i...
Abstract-- Single-ended static random access memory (SESRAM) is well known for their tremendous potential of low active power and leakage dissipations. In this paper, we present a ...
Jawar Singh, Jimson Mathew, Saraju P. Mohanty, Dhi...
-- Aggressive CMOS scaling results in low threshold voltage and thin oxide thickness for transistors manufactured in deep submicron regime. As a result, reducing the subthreshold a...