9 search results - page 2 / 2 » A New Methodology for Concurrent Technology Development and ... |
DATE
2008
IEEE
13 years 6 months ago
2008
IEEE
Advanced MOSFETs such as Strained Silicon (SS) devices have emerged as critical enablers to keep Moore's law on track for sub100nm technologies. Use of Strained Silicon devic...
ICCAD
2003
IEEE
14 years 1 months ago
2003
IEEE
Ultra-deep submicron manufacturability impacts physical design (PD) through complex layout rules and large guardbands for process variability; this creates new requirements for ne...
ICCAD
2007
IEEE
14 years 1 months ago
2007
IEEE
— Starting at the 65nm node, stress engineering to improve performance of transistors has been a major industry focus. An intrinsic stress source – shallow trench isolation –...
BMCBI
2010
13 years 4 months ago
2010
Background: Biological networks offer us a new way to investigate the interactions among different components and address the biological system as a whole. In this paper, a revers...