13 search results - page 2 / 3 » A low leakage 9t sram cell for ultra-low power operation |
JCP
2008
13 years 5 months ago
2008
Instability of SRAM memory cells derived from the process variation and lowered supply voltage has recently been posing significant design challenges for low power SoCs. This paper...
VLSID
2006
IEEE
13 years 11 months ago
2006
IEEE
As the IC process technology scales, the oxide thickness and operating voltage continues to decrease. The gate oxide thickness in recent and future IC process technology has appro...
SOCC
2008
IEEE
14 years 4 days ago
2008
IEEE
In this paper, new SRAM cell design methods for FinFET technology are proposed. One of the most important features of FinFET is that the independent front and back gate can be bia...
CF
2011
ACM
12 years 5 months ago
2011
ACM
Ubiquitous computing has become a very popular paradigm. The most suitable technological solution for those systems consists of using hybrid processors able to operate at high vol...
DATE
2009
IEEE
14 years 16 days ago
2009
IEEE
this paper proposes a novel Process Variation Aware SRAM architecture designed to inherently support voltage scaling. The peripheral circuitry of the SRAM is modified to selectivel...