16 search results - page 1 / 4 » A low-leakage current power 180-nm CMOS SRAM |
ASPDAC
2008
ACM
13 years 6 months ago
2008
ACM
MTDT
2006
IEEE
13 years 10 months ago
2006
IEEE
This paper highlights the cell current characterization of a low leakage 6T SRAM by adjusting the threshold voltages of the transistors in the memory array to reduce the standby p...
VLSID
2006
IEEE
13 years 10 months ago
2006
IEEE
As the IC process technology scales, the oxide thickness and operating voltage continues to decrease. The gate oxide thickness in recent and future IC process technology has appro...
GLVLSI
2008
IEEE
13 years 11 months ago
2008
IEEE
This paper presents the design and evaluation of a new SRAM cell made of nine transistors (9T). The proposed 9T cell utilizes a scheme with separate read and write wordlines; it i...
ISCAS
2007
IEEE
13 years 11 months ago
2007
IEEE
- Data in conventional six transistor (6T) static random access memory (SRAM) cells are vulnerable to noise due to the direct access to the data storage nodes through the bit lines...