22 search results - page 2 / 5 » A unified MOSFET channel charge model for device modeling in... |
SBCCI
2004
ACM
13 years 10 months ago
2004
ACM
This paper presents a design methodology for RF CMOS Low Noise Amplifiers (LNA). This methodology uses a current–based MOSFET model, which allows a detailed analysis of an LNA f...
DAC
2006
ACM
14 years 5 months ago
2006
ACM
FinFET devices promise to replace traditional MOSFETs because of superior ability in controlling leakage and minimizing short channel effects while delivering a strong drive curre...
ICCAD
2006
IEEE
14 years 1 months ago
2006
IEEE
— For 65nm and below devices, even after optical proximity correction (OPC), the gate may still be non-rectangular. There are several limited works on the device and circuit char...
FDL
2008
IEEE
13 years 11 months ago
2008
IEEE
—This paper introduces a novel numerical carbon nanotube transistor (CNT) modelling approach which brings in a flexible and efficient cubic spline non-linear approximation of t...
ISLPED
2009
ACM
13 years 11 months ago
2009
ACM
In this paper, we observe that minimum energy Emin of subthreshold logic dramatically increases when reaching 45 nm node. We demonstrate by circuit simulation and analytical model...