4 search results - page 1 / 1 » CMOS logic design with independent-gate FinFETs |
ICCD
2007
IEEE
14 years 2 months ago
2007
IEEE
Fin-type field-effect transistors (FinFETs) are promising substitutes for bulk CMOS in nano-scale circuits. In this paper, it is observed that in spite of improved device charact...
DAC
2006
ACM
14 years 6 months ago
2006
ACM
FinFET devices promise to replace traditional MOSFETs because of superior ability in controlling leakage and minimizing short channel effects while delivering a strong drive curre...
ASPDAC
2010
ACM
13 years 2 months ago
2010
ACM
This paper describes gate work function and oxide thickness tuning to realize novel circuits using dual-Vth independent-gate FinFETs. Dual-Vth FinFETs with independent gates enabl...
ICCAD
2005
IEEE
14 years 2 months ago
2005
IEEE
: Double-Gate (DG) transistors have emerged as promising devices for nano-scale circuits due to their better scalability compared to bulk CMOS. Among the various types of DG device...