In this paper, we describe the development of device models and tools for the design of new transistors such as the carbon nanotube transistor. An HSPICE model for enhancement mod...
H.-S. Philip Wong, Jie Deng, Arash Hazeghi, Tejas ...
-- Carbon nanotubes (CNTs) and carbon nanotube field effect transistors (CNFETs) have demonstrated extraordinary properties and are widely accepted as the building blocks of next g...
Intrinsic and parasitic capacitances play an important role in determining the high?frequency RF performance of devices. Recently, a new type of carbon nanotube field effect trans...
Chaitanya Kshirsagar, Mohamed N. El-Zeftawi, Kaust...
Recently, it was demonstrated that the polarity of carbon nanotube field effect transistors can be electrically controlled. In this paper we show how Programmable Logic Arrays (PL...
M. Haykel Ben Jamaa, David Atienza, Yusuf Leblebic...
Carbon Nanotubes (CNTs) are grown using chemical synthesis, and the exact positioning and chirality of CNTs are very difficult to control. As a result, “small-width” Carbon Na...
Jie Zhang, Shashikanth Bobba, Nishant Patil, Alber...