This paper describes a physics-based semi-analytical model for Schottky-barrier carbon nanotube (CNT) and graphene nanoribbon (GNR) transistors. The model includes the treatment o...
Xuebei Yang, Gianluca Fiori, Giuseppe Iannaccone, ...
— Since rapid progress has been made in device improvement and integration of small carbon nanotube fieldeffect transistors (CNFETs) circuits, the time has come for developing c...
Carbon Nanotube Field-Effect Transistors (CNFETs) are being extensively studied as possible successors to CMOS. Novel device structures have been fabricated and device simulators ...
Carbon Nanotube Field-Effect Transistors (CNFETs) show big promise as extensions to silicon-CMOS because: 1) Ideal CNFETs can provide significant energy and performance benefits o...
Subhasish Mitra, Jie Zhang, Nishant Patil, Hai Wei
Carbon Nanotube Field-Effect Transistors (CNFETs) can potentially provide significant energy-delay-product benefits compared to silicon CMOS. However, CNFET circuits are subject t...
Jie Zhang, Nishant Patil, Albert Lin, H.-S. Philip...