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ICCAD
2003
IEEE

Modeling of Ballistic Carbon Nanotube Field Effect Transistors for Efficient Circuit Simulation

10 years 8 months ago
Modeling of Ballistic Carbon Nanotube Field Effect Transistors for Efficient Circuit Simulation
Carbon Nanotube Field-Effect Transistors (CNFETs) are being extensively studied as possible successors to CMOS. Novel device structures have been fabricated and device simulators have been developed to estimate their performance in a sub 10nm transistor era. This paper presents a novel method of circuit-compatible modeling of CNFETs in their ultimate performance limit. The model so developed has been used to simulate arithmetic and logic blocks using HSPICE.
Arijit Raychowdhury, Saibal Mukhopadhyay, Kaushik
Added 16 Mar 2010
Updated 16 Mar 2010
Type Conference
Year 2003
Where ICCAD
Authors Arijit Raychowdhury, Saibal Mukhopadhyay, Kaushik Roy
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