Modeling of Ballistic Carbon Nanotube Field Effect Transistors for Efficient Circuit Simulation

Carbon Nanotube Field-Effect Transistors (CNFETs) are being extensively studied as possible successors to CMOS. Novel device structures have been fabricated and device simulators have been developed to estimate their performance in a sub 10nm transistor era. This paper presents a novel method of circuit-compatible modeling of CNFETs in their ultimate performance limit. The model so developed has been used to simulate arithmetic and logic blocks using HSPICE.

• Type: Conference
• Year: 2003
• Where: ICCAD
• Authors: Arijit Raychowdhury, Saibal Mukhopadhyay, Kaushik Roy
• Keywords: Device Simulators, Hardware, ICCAD 2003, Nanotube Field-effect Transistors, Ultimate Performance Limit