With scaling of CMOS technologies, sub-threshold, gate and reverse biased junction band-to-band-tunneling leakage have increased dramatically. Together they account for more than 2...
For a nanoCMOS of sub-65nm technology, where the gate oxide (SiO2) thickness is very low, the gate leakage is one of the major components of power dissipation. In this paper, we pr...
Rising interest in the applications of wireless sensor networks has spurred research in the development of computing systems for lowthroughput, energy-constrained applications. Un...
In this paper, we present the design of a P4 (Power-PerformanceProcess-Parasitic) aware voltage controlled oscillator (VCO) at nanoCMOS technologies. Through simulations, we have ...