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VLSID
2007
IEEE
152views VLSI» more  VLSID 2007»
14 years 5 months ago
An Efficient Technique for Leakage Current Estimation in Sub 65nm Scaled CMOS Circuits Based on Loading Effect
With scaling of CMOS technologies, sub-threshold, gate and reverse biased junction band-to-band-tunneling leakage have increased dramatically. Together they account for more than 2...
Ashesh Rastogi, Wei Chen, Alodeep Sanyal, Sandip K...
VLSID
2006
IEEE
129views VLSI» more  VLSID 2006»
14 years 5 months ago
Modeling and Reduction of Gate Leakage during Behavioral Synthesis of NanoCMOS Circuits
For a nanoCMOS of sub-65nm technology, where the gate oxide (SiO2) thickness is very low, the gate leakage is one of the major components of power dissipation. In this paper, we pr...
Saraju P. Mohanty, Elias Kougianos
CASES
2006
ACM
13 years 10 months ago
Architecture and circuit techniques for low-throughput, energy-constrained systems across technology generations
Rising interest in the applications of wireless sensor networks has spurred research in the development of computing systems for lowthroughput, energy-constrained applications. Un...
Mark Hempstead, Gu-Yeon Wei, David Brooks
GLVLSI
2009
IEEE
143views VLSI» more  GLVLSI 2009»
13 years 8 months ago
Unified P4 (power-performance-process-parasitic) fast optimization of a Nano-CMOS VCO
In this paper, we present the design of a P4 (Power-PerformanceProcess-Parasitic) aware voltage controlled oscillator (VCO) at nanoCMOS technologies. Through simulations, we have ...
Dhruva Ghai, Saraju P. Mohanty, Elias Kougianos